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| MJE210 SILICON PNP TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Base-Emitter Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case 25 o C at T amb 25 o C Storage Temperature Max Operating Junction Temperature Value -40 -25 -8 -5 -10 -1 15 1.5 -65 to 150 150 Unit V V V A A A W o o C C 1/4 September 1997 MJE210 THERMAL DATA R thj-amb R thj-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max 83.4 8.34 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V CEO(sus) V CE(sat) V BE(sat) V BE h FE fT C CBO Transistor Frequency Collector-base Capacitance Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Base-Emitter on Voltage Base-Emitter on Voltage DC Current Gain Test Conditions V CB = -40 V V CB = -40 V V EB = -8 V I C = -10 mA I C = -0.5 A I C = -2 A I C = -5 A I C = -5 A I C =- 2 A I C = -0.5 A I C = -2 A I C = -5 A I C = 0.1 A f = 10 MHz V CB = -10 V IE = 0 I B = -50 mA I B = -0.2 A I B = -1 A I B = -1 A V CE = -1 V V CE = -1 V V CE = -1 V V CE = -2 V V CE = 10 V f = 0.1 MHz 70 45 10 65 120 -25 -0.3 -0.75 -1.8 -2.5 -1.6 T CASE = 125 o C Min. Typ. Max. -100 -100 -100 Unit nA A nA V V V V V V 180 MHz pF Pulsed: Pulse duration = 300s, duty cycle 1.5% 2/4 MJE210 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 3/4 MJE210 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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